| 772641 | KM416V1004CJ-50 | 1m x 16bit CMOS RAM dinamic cu date extinse afară, 50ns, VCC = 3.3V, refresh perioadă = 64ms | Samsung Electronic |
| 772642 | KM416V1004CJ-6 | 3.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60ns | Samsung Electronic |
| 772643 | KM416V1004CJ-60 | 1m x 16bit CMOS RAM dinamic cu date extinse afară, 60ns, VCC = 3.3V, refresh perioadă = 64ms | Samsung Electronic |
| 772644 | KM416V1004CJ-L5 | 3.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50ns | Samsung Electronic |
| 772645 | KM416V1004CJ-L6 | 3.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60ns | Samsung Electronic |
| 772646 | KM416V1004CJL-45 | 1m x 16bit CMOS RAM dinamic cu date extinse out, 45ns, VCC = 3.3V, auto-refresh | Samsung Electronic |
| 772647 | KM416V1004CJL-50 | 1m x 16bit CMOS RAM dinamic cu date extinse out, 50ns, VCC = 3.3V, auto-refresh | Samsung Electronic |
| 772648 | KM416V1004CJL-60 | 1m x 16bit CMOS RAM dinamic cu date extinse out, 60ns, VCC = 3.3V, auto-refresh | Samsung Electronic |
| 772649 | KM416V1004CT-45 | 1m x 16bit CMOS RAM dinamic cu date extinse afară, 45ns, VCC = 3.3V, refresh perioadă = 64ms | Samsung Electronic |
| 772650 | KM416V1004CT-5 | 3.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50ns | Samsung Electronic |
| 772651 | KM416V1004CT-50 | 1m x 16bit CMOS RAM dinamic cu date extinse afară, 50ns, VCC = 3.3V, refresh perioadă = 64ms | Samsung Electronic |
| 772652 | KM416V1004CT-6 | 3.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60ns | Samsung Electronic |
| 772653 | KM416V1004CT-60 | 1m x 16bit CMOS RAM dinamic cu date extinse afară, 60ns, VCC = 3.3V, refresh perioadă = 64ms | Samsung Electronic |
| 772654 | KM416V1004CT-L5 | 3.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50ns | Samsung Electronic |
| 772655 | KM416V1004CT-L6 | 3.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60ns | Samsung Electronic |
| 772656 | KM416V1004CTL-45 | 1m x 16bit CMOS RAM dinamic cu date extinse out, 45ns, VCC = 3.3V, auto-refresh | Samsung Electronic |
| 772657 | KM416V1004CTL-50 | 1m x 16bit CMOS RAM dinamic cu date extinse out, 50ns, VCC = 3.3V, auto-refresh | Samsung Electronic |
| 772658 | KM416V1004CTL-60 | 1m x 16bit CMOS RAM dinamic cu date extinse out, 60ns, VCC = 3.3V, auto-refresh | Samsung Electronic |
| 772659 | KM416V1200B | RAM dinamică CMOS 1M x 16Bit cu modul Pagină rapidă | Samsung Electronic |
| 772660 | KM416V1200BJ-5 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 50ns | Samsung Electronic |
| 772661 | KM416V1200BJ-6 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 60ns | Samsung Electronic |
| 772662 | KM416V1200BJ-7 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 70ns | Samsung Electronic |
| 772663 | KM416V1200BJL-5 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 50ns | Samsung Electronic |
| 772664 | KM416V1200BJL-6 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 60ns | Samsung Electronic |
| 772665 | KM416V1200BJL-7 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 70ns | Samsung Electronic |
| 772666 | KM416V1200BT-5 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 50ns | Samsung Electronic |
| 772667 | KM416V1200BT-6 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 60ns | Samsung Electronic |
| 772668 | KM416V1200BT-7 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 70ns | Samsung Electronic |
| 772669 | KM416V1200BTL-5 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 50ns | Samsung Electronic |
| 772670 | KM416V1200BTL-6 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 60ns | Samsung Electronic |
| 772671 | KM416V1200BTL-7 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 70ns | Samsung Electronic |
| 772672 | KM416V1200C | RAM dinamică CMOS 1M x 16Bit cu modul Pagină rapidă | Samsung Electronic |
| 772673 | KM416V1200CJ-5 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 50ns | Samsung Electronic |
| 772674 | KM416V1200CJ-6 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 60ns | Samsung Electronic |
| 772675 | KM416V1200CJL-5 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 50ns | Samsung Electronic |
| 772676 | KM416V1200CJL-6 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 60ns | Samsung Electronic |
| 772677 | KM416V1200CT-5 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 50ns | Samsung Electronic |
| 772678 | KM416V1200CT-6 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 60ns | Samsung Electronic |
| 772679 | KM416V1200CTL-5 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 50ns | Samsung Electronic |
| 772680 | KM416V1200CTL-6 | 1m x 16bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 60ns | Samsung Electronic |
