| 1177881 | MTP2N50 | MOSFET-uri de putere N-Channel, 3,0 A, 450 V / 500 V | Fairchild Semiconductor |
| 1177882 | MTP2N50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS (pornit) = 3,6 OHM | Motorola |
| 1177883 | MTP2N60 | TMOS POWER FET 2.0 AMPERI 600 VOLȚI RDS (activat) = 3,8 OHMS | Motorola |
| 1177884 | MTP2N60E | TMOS POWER FET 2.0 AMPERI 600 VOLȚI RDS (activat) = 3,8 OHMS | Motorola |
| 1177885 | MTP2N60E | N-Channel Enhancement-Mode Silicon Gate | ON Semiconductor |
| 1177886 | MTP2N60E-D | TMOS E-FET Tranzistor cu efect de câmp de putere Îmbunătățirea canalului N - Poartă din silicon în mod | ON Semiconductor |
| 1177887 | MTP2N80 | Trans MOSFET N-CH 400V 2A 3-Pin (3 + Tab) TO-220 | New Jersey Semiconductor |
| 1177888 | MTP2N85 | Trans MOSFET N-CH 400V 2A 3-Pin (3 + Tab) TO-220 | New Jersey Semiconductor |
| 1177889 | MTP2N90 | XSTR N-CHL TMOS FET 2A 8OHM 900V TO-220 PKG | New Jersey Semiconductor |
| 1177890 | MTP2P50 | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS (pornit) = 6,0 OHM | Motorola |
| 1177891 | MTP2P50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS (pornit) = 6,0 OHM | Motorola |
| 1177892 | MTP2P50E | MOSFET de putere 2 Amperi, 500 Volți | ON Semiconductor |
| 1177893 | MTP2P50E-D | MOSFET de putere 2 Amperi, 500 volți P-Channel TO-220 | ON Semiconductor |
| 1177894 | MTP2P50EG | MOSFET de putere 2 Amperi, 500 Volți | ON Semiconductor |
| 1177895 | MTP3055 | TMOS POWER FET 12 AMPERI 60 VOLȚI RDS (pornit) = 0,15 OHM | Motorola |
| 1177896 | MTP3055 | N - CANAL 60V - 0,1ohm - 12A TO-220 MOSFET STripFET | ST Microelectronics |
| 1177897 | MTP3055E | N-canal TMOS putere FET. 60 V, 12 A, Rds (on) 0,15 Ohm. | Motorola |
| 1177898 | MTP3055E | Trans MOSFET N-CH 60V 12A 3-Pin (3 + Tab) TO-220 | New Jersey Semiconductor |
| 1177899 | MTP3055E | N - CANAL 60V - 0.1Ohm - 12A TO-220 MOSFET STripFET | SGS Thomson Microelectronics |
| 1177900 | MTP3055E | N-CANAL 60V - 0,1 OHM - 12A TO-220 STRIPFET POWER MOSFET | ST Microelectronics |
| 1177901 | MTP3055EL | N-canal TMOS FET de putere la nivel logic. 60 V, 12 A, Rds (on) 0,18 Ohm. | Motorola |
| 1177902 | MTP3055V | N-Channel Mode Enhancement efect de câmp tranzistor | Fairchild Semiconductor |
| 1177903 | MTP3055V | TMOS POWER FET 12 AMPERI 60 VOLȚI RDS (pornit) = 0,15 OHM | Motorola |
| 1177904 | MTP3055V | TMOS Power FET 60V, 0,15 Ohm | ON Semiconductor |
| 1177905 | MTP3055V-D | MOSFET de putere 12 Amperi, N-canal 60-Volți TO-220 | ON Semiconductor |
| 1177906 | MTP3055VL | 60V, SINGLE, TO-220, canal N | Fairchild Semiconductor |
| 1177907 | MTP3055VL | TMOS POWER FET 12 AMPERI 60 VOLȚI RDS (pornit) = 0,18 OHM | Motorola |
| 1177908 | MTP3055VL | MOSFET de putere 12 Amperi, 60 Volți, Nivel Logic | ON Semiconductor |
| 1177909 | MTP3055VL | MOSFET de putere 12 Amperi, 60 Volți, Nivel Logic | ON Semiconductor |
| 1177910 | MTP3055VL-D | MOSFET de putere 12 Amperi, 60 Volți, Nivel Logic N-Canal TO-220 | ON Semiconductor |
| 1177911 | MTP30N06VL | TMOS POWER FET 30 AMPERI 60 VOLȚI RDS (pornit) = 0,050 OHM | Motorola |
| 1177912 | MTP30N06VL | MOSFET de putere 30 Amperi, 60 de volti, Logic Level | ON Semiconductor |
| 1177913 | MTP30N06VL-D | MOSFET de putere 30 Amperi, 60 Volți, Nivel Logic N-Canal TO-220 | ON Semiconductor |
| 1177914 | MTP30N08M | TRANSISTOR DE EFECT DE CÂMP DE PUTERE | Motorola |
| 1177915 | MTP30P06 | TMOS POWER FET 30 AMPERI 60 VOLȚI RDS (pornit) = 0,080 OHM | Motorola |
| 1177916 | MTP30P06V | TMOS POWER FET 30 AMPERI 60 VOLȚI RDS (pornit) = 0,080 OHM | Motorola |
| 1177917 | MTP30P06V | MOSFET de putere 30 Amperi, 60 Volți | ON Semiconductor |
| 1177918 | MTP30P06V-D | MOSFET de putere 30 Amperi, P-Canal 60 Volți TO-220 | ON Semiconductor |
| 1177919 | MTP30P06VG | MOSFET de putere 30 Amperi, 60 Volți | ON Semiconductor |
| 1177920 | MTP33N10 | TMOS POWER FET 33 AMPERES 100 VOLTS RDS (pornit) = 0,06 OHM | Motorola |
