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Datasheet-uri găsite :: 1675338
Pagina: << | 19305 | 19306 | 19307 | 19308 | 19309 | 19310 | 19311 | 19312 | 19313 | 19314 | 19315 | >>
Nr.NumeDescriereProducător
772361KM416C1004BT-75V, 1m x 16 bit CMOS DRAM cu date extinse out, 70nsSamsung Electronic
772362KM416C1004BT-L455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
772363KM416C1004BT-L55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772364KM416C1004BT-L65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772365KM416C1004BT-L75V, 1m x 16 bit CMOS DRAM cu date extinse out, 70nsSamsung Electronic
772366KM416C1004CRAM dinamică CMOS 1M x 16Bit cu ieșire extinsă de dateSamsung Electronic
772367KM416C1004CJ-451m x 16bit CMOS RAM dinamic cu date extinse afară, 45ns, VCC = 5.0V, refresh perioadă = 64msSamsung Electronic
772368KM416C1004CJ-51m x 16bit CMOS RAM dinamic cu date extinse afară, 50ns, VCC = 5.0V, refresh perioadă = 64msSamsung Electronic
772369KM416C1004CJ-61m x 16bit CMOS RAM dinamic cu date extinse afară, 60ns, VCC = 5.0V, refresh perioadă = 64msSamsung Electronic
772370KM416C1004CJ-L455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
772371KM416C1004CJ-L55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772372KM416C1004CJ-L65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772373KM416C1004CJL-451m x 16bit CMOS RAM dinamic cu date extinse out, 45ns, VCC = 5.0V, auto-refreshSamsung Electronic
772374KM416C1004CJL-51m x 16bit CMOS RAM dinamic cu date extinse out, 50ns, VCC = 5.0V, auto-refreshSamsung Electronic
772375KM416C1004CJL-61m x 16bit CMOS RAM dinamic cu date extinse out, 60ns, VCC = 5.0V, auto-refreshSamsung Electronic
772376KM416C1004CT-455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
772377KM416C1004CT-55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772378KM416C1004CT-65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772379KM416C1004CT-L455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
772380KM416C1004CT-L55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772381KM416C1004CT-L65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772382KM416C1004CTL-451m x 16bit CMOS RAM dinamic cu date extinse out, 45ns, VCC = 5.0V, auto-refreshSamsung Electronic
772383KM416C1004CTL-51m x 16bit CMOS RAM dinamic cu date extinse out, 50ns, VCC = 5.0V, auto-refreshSamsung Electronic
772384KM416C1004CTL-61m x 16bit CMOS RAM dinamic cu date extinse out, 60ns, VCC = 5.0V, auto-refreshSamsung Electronic
772385KM416C1200BRAM dinamică CMOS 1M x 16Bit cu modul Pagină rapidăSamsung Electronic
772386KM416C1200BJ-51m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
772387KM416C1200BJ-61m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 60nsSamsung Electronic
772388KM416C1200BJ-71m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 70nsSamsung Electronic
772389KM416C1200BJL-51m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
772390KM416C1200BJL-61m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 60nsSamsung Electronic
772391KM416C1200BJL-71m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 70nsSamsung Electronic
772392KM416C1200BT-51m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
772393KM416C1200BT-61m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 60nsSamsung Electronic
772394KM416C1200BT-71m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 70nsSamsung Electronic
772395KM416C1200BTL-51m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
772396KM416C1200BTL-61m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 60nsSamsung Electronic
772397KM416C1200BTL-71m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 70nsSamsung Electronic
772398KM416C1200CRAM dinamică CMOS 1M x 16Bit cu modul Pagină rapidăSamsung Electronic
772399KM416C1200CJ-51m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
772400KM416C1200CJ-61m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 60nsSamsung Electronic
Datasheet-uri găsite :: 1675338
Pagina: << | 19305 | 19306 | 19307 | 19308 | 19309 | 19310 | 19311 | 19312 | 19313 | 19314 | 19315 | >>

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