| 653641 | HSA830 | 3,3 V, +/- 100 ppm, ECL ceas de cristal oscilator | NEL Frequency Controls |
| 653642 | HSA831 | 3,3 V, +/- 50 ppm, ECL ceas de cristal oscilator | NEL Frequency Controls |
| 653643 | HSA837 | 3,3 V, +/- 25 ppm, ECL ceas de cristal oscilator | NEL Frequency Controls |
| 653644 | HSA839 | 3,3 V, client specific, ECL ceas de cristal oscilator | NEL Frequency Controls |
| 653645 | HSA870 | 3,3 V, +/- 100 ppm, cristal pozitiv ECL ceas oscilator | NEL Frequency Controls |
| 653646 | HSA871 | 3,3 V, +/- 50 ppm, cristal pozitiv ECL ceas oscilator | NEL Frequency Controls |
| 653647 | HSA877 | 3,3 V, +/- 25 ppm, cristal pozitiv ECL ceas oscilator | NEL Frequency Controls |
| 653648 | HSA879 | 3,3 V, client specific, cristal pozitiv ECL ceas oscilator | NEL Frequency Controls |
| 653649 | HSA880 | 3,3 V, +/- 100 ppm, cristal pozitiv ECL ceas oscilator | NEL Frequency Controls |
| 653650 | HSA881 | 3,3 V, +/- 50 ppm, cristal pozitiv ECL ceas oscilator | NEL Frequency Controls |
| 653651 | HSA887 | 3,3 V, +/- 25 ppm, cristal pozitiv ECL ceas oscilator | NEL Frequency Controls |
| 653652 | HSA889 | 3,3 V, client specific, cristal pozitiv ECL ceas oscilator | NEL Frequency Controls |
| 653653 | HSB0104YP | Schottky Barrier Diodes for Detection and Mixer | Hitachi Semiconductor |
| 653654 | HSB0104YP | Diode> Comutare | Renesas |
| 653655 | HSB1109 | PNP TRANSISTOR PLANAR EPITAXIAL | Hi-Sincerity Microelectronics |
| 653656 | HSB1109S | PNP TRANSISTOR PLANAR EPITAXIAL | Hi-Sincerity Microelectronics |
| 653657 | HSB123 | Diode> Comutare | Renesas |
| 653658 | HSB124 | Diodă plană epitaxială din siliciu pentru comutare de mare viteză | Hitachi Semiconductor |
| 653659 | HSB124S | Small Signal Diode | Hitachi Semiconductor |
| 653660 | HSB124S | Diode> Comutare | Renesas |
| 653661 | HSB1386I | TRANSISTOR DE FRECVENȚĂ SCĂZUTĂ (-20V, -4A) | Hi-Sincerity Microelectronics |
| 653662 | HSB1426 | PNP TRANSISTOR PLANAR EPITAXIAL | Hi-Sincerity Microelectronics |
| 653663 | HSB226S | Schottky Barrier Diodes for Detection and Mixer | Hitachi Semiconductor |
| 653664 | HSB226S | Diode> Comutare | Renesas |
| 653665 | HSB226WK | Schottky Barrier Diodes for Detection and Mixer | Hitachi Semiconductor |
| 653666 | HSB226WK | Diode> Comutare | Renesas |
| 653667 | HSB226YP | Schottky Barrier Diodes for Detection and Mixer | Hitachi Semiconductor |
| 653668 | HSB226YP | Diode> Comutare | Renesas |
| 653669 | HSB276AS | Schottky Barrier Diodes for Detection and Mixer | Hitachi Semiconductor |
| 653670 | HSB276AS | Diode> Comutare | Renesas |
| 653671 | HSB276AYP | Schottky Barrier Diodes for Detection and Mixer | Hitachi Semiconductor |
| 653672 | HSB276AYP | Diode> Comutare | Renesas |
| 653673 | HSB276S | Schottky Barrier Diodes for Detection and Mixer | Hitachi Semiconductor |
| 653674 | HSB276S | Diode> Comutare | Renesas |
| 653675 | HSB278S | Schottky Barrier Diodes for Detection and Mixer | Hitachi Semiconductor |
| 653676 | HSB278S | Diode> Comutare | Renesas |
| 653677 | HSB2836 | Diode> Comutare | Renesas |
| 653678 | HSB2838 | Diode> Comutare | Renesas |
| 653679 | HSB285S | Diode> Comutare | Renesas |
| 653680 | HSB507 | Emițător de tensiune de bază: 5V 3A PNP epitaxial plan tranzistor | Hi-Sincerity Microelectronics |
