| 287081 | BF908R | N-channel dual-gate MOSFET | NXP Semiconductors |
| 287082 | BF908R | MOS-FET dual-gate | Philips |
| 287083 | BF908WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 287084 | BF908WR | MOS-FET dual-gate cu canal N | Philips |
| 287085 | BF909 | N-channel dual-gate MOSFET | NXP Semiconductors |
| 287086 | BF909 | MOS-FET dual-gate cu canal N | Philips |
| 287087 | BF909R | N-channel dual-gate MOSFET | NXP Semiconductors |
| 287088 | BF909R | MOS-FET dual-gate cu canal N | Philips |
| 287089 | BF909WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 287090 | BF909WR | MOS-FET dual-gate cu canal N | Philips |
| 287091 | BF926 | Trans GP BJT PNP 30V 0.025A | New Jersey Semiconductor |
| 287092 | BF926 | PNP SILICON TRANSISTOR PLANAR | Siemens |
| 287093 | BF939 | PNP SILICON TRANSISTOR PLANAR | Siemens |
| 287094 | BF959 | 0.625W General Purpose NPN Transistor plastic cu plumb. 20V Vceo, 0.100A Ic, 35 - hFE | Continental Device India Limited |
| 287095 | BF959 | Tranzistor VHF (NPN) | Motorola |
| 287096 | BF959 | Tranzistor VHF | ON Semiconductor |
| 287097 | BF959 | NPN Silicon RF Tranzistor (Pentru aplicații driver de filtru SAW în tunere TV Pentru trepte de amplificare liniară în bandă largă VHF) | Siemens |
| 287098 | BF959-D | VHF tranzistor NPN siliciu | ON Semiconductor |
| 287099 | BF959RL1 | Tranzistor VHF | ON Semiconductor |
| 287100 | BF959ZL1 | Tranzistor VHF | ON Semiconductor |
| 287101 | BF960 | N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE. MOD DE DEPLEȚARE | Vishay |
| 287102 | BF961 | Trans RF MOSFET N-CH 20V 0.03A 4-pini TO-50 | New Jersey Semiconductor |
| 287103 | BF961 | N-Channel Dual Gate MOS-Fieldefect Tetrode, Mod De epuizare | TEMIC |
| 287104 | BF961 | N-Channel Dual Gate MOS & Tetrode Fieldeffect, Mod de epuizare | Vishay |
| 287105 | BF961A | N-Channel Dual Gate MOS-Fieldefect Tetrode, Mod De epuizare | Vishay |
| 287106 | BF961B | N-Channel Dual Gate MOS-Fieldefect Tetrode, Mod De epuizare | Vishay |
| 287107 | BF964 | N-Channel Dual Gate MOS-Fieldeffect Tetrode / Depletion Mode | Vishay |
| 287108 | BF964S | N-Channel Dual Gate MOS & Tetrode Fieldeffect, Mod de epuizare | Vishay |
| 287109 | BF966S | N-Channel Dual Gate MOS & Tetrode Fieldeffect, Mod de epuizare | Vishay |
| 287110 | BF967 | PNP SILICON TRANSISTOR PLANAR | Siemens |
| 287111 | BF968 | PNP SILICON TRANSISTOR PLANAR | Siemens |
| 287112 | BF970 | Silicon PNP Planar RF tranzistor | Vishay |
| 287113 | BF979 | Silicon PNP Planar RF tranzistor | Vishay |
| 287114 | BF979S | PNP SILICON TRANSISTOR PLANAR | Siemens |
| 287115 | BF981 | SILICON N-CHANNEL DUAL GATE MOS-FET | Philips |
| 287116 | BF982 | V (ds): 20V; I (d): 40mA; 225MW; siliciu N-canal dublu poarta MOS-FET | Philips |
| 287117 | BF982 | SILICON N-CHANNEL DUAL GATE MOS-FET | Unknow |
| 287118 | BF987 | Triod MOSFET cu canal N din siliciu | Infineon |
| 287119 | BF987 | SILICON N CHANNEL MOSFET TRIODE (Pentru trepte de frecvență înaltă de până la 300 MHz, de preferință în aplicații FM Capacitate mare de suprasarcină) | Siemens |
| 287120 | BF988 | N-Channel Dual Gate MOS & Tetrode Fieldeffect, Mod de epuizare | Vishay |
