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Datasheet-uri găsite :: 1675338
Pagina: << | 6838 | 6839 | 6840 | 6841 | 6842 | 6843 | 6844 | 6845 | 6846 | 6847 | 6848 | >>
Nr.NumeDescriereProducător
273681BC550NPN de uz generalPhilips
273682BC55050 V, 100 mA, NPN tranzistor de siliciuSiemens
273683BC550Tranzistor. Comutare și AF amplificator. Zgomot redus. Vcbo = 50V, Vceo = 45V, VEBO = 5V, Pc = 500mW, Ic = 100mA.USHA India LTD
273684BC550A0.625W General Purpose NPN Transistor plastic cu plumb. 45V Vceo, 0.100A Ic, 110-220 hFEContinental Device India Limited
273685BC550ADispozitive discrete-tranzistor-tranzistor bipolar NPNTaiwan Semiconductor
273686BC550ABUNPN Epitaxial Silicon TransistorFairchild Semiconductor
273687BC550ATANPN Epitaxial Silicon TransistorFairchild Semiconductor
273688BC550B0.625W General Purpose NPN Transistor plastic cu plumb. 45V Vceo, 0.100A Ic, 200-450 hFEContinental Device India Limited
273689BC550BNPN Epitaxial Silicon TransistorFairchild Semiconductor
273690BC550BTranzistori reduse de zgomotMotorola
273691BC550BNPN de uz generalPhilips
273692BC550B50 V, 100 mA, NPN tranzistor de siliciuSiemens
273693BC550BDispozitive discrete-tranzistor-tranzistor bipolar NPNTaiwan Semiconductor
273694BC550BBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
273695BC550BTANPN Epitaxial Silicon TransistorFairchild Semiconductor
273696BC550BTARNPN Epitaxial Silicon TransistorFairchild Semiconductor
273697BC550BUNPN Epitaxial Silicon TransistorFairchild Semiconductor
273698BC550C0.625W General Purpose NPN Transistor plastic cu plumb. 45V Vceo, 0.100A Ic, 420-800 hFEContinental Device India Limited
273699BC550CTranzistori reduse de zgomotMotorola
273700BC550CTranzistori reduse de zgomotON Semiconductor
273701BC550CNPN de uz generalPhilips
273702BC550C50 V, 100 mA, NPN tranzistor de siliciuSiemens
273703BC550CDispozitive discrete-tranzistor-tranzistor bipolar NPNTaiwan Semiconductor
273704BC550CBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
273705BC550CTANPN Epitaxial Silicon TransistorFairchild Semiconductor
273706BC556PNP SILICON TRANSISTORE EPITAXIALE PLANAREBoca Semiconductor Corporation
273707BC5560.500W General Purpose NPN Transistor plastic cu plumb. 80V Vceo, 0.100A Ic, 75-475 hFEContinental Device India Limited
273708BC556PlanarTransistors Si-epitaxialDiotec Elektronische
273709BC556PNP Epitaxial Silicon TransistorFairchild Semiconductor
273710BC556Tranzistoare de semnal mici (PNP)General Semiconductor
273711BC556PNP silicon tranzitor planar epitaxialHoney Technology
273712BC556General Purpose TransistorKorea Electronics (KEC)
273713BC556PNP silicon amplificator tranzistor 625mWMicro Commercial Components
273714BC556PNP SILICON AF TRANSISTORI DE SEMNAL MICMicro Electronics
273715BC556Amplificator TranzistoriMotorola
273716BC556Tranzistoare amplificatoare (silicon PNP)ON Semiconductor
273717BC556PNP tranzistori de uz generalPhilips
273718BC556PNP silicon epitaxial tranzistor planar pentru comutare și aplicații AFĄĄĄĄSemtech
273719BC556TRANSISTORURI PNIL SILICONSiemens
273720BC556Tranzistor. Comutare și AF amplificator. De înaltă tensiune. Zgomot redus. Vcbo = -80V, Vceo = -65V, VEBO = 5V, Pc = 500mW, Ic = -100mA.USHA India LTD
Datasheet-uri găsite :: 1675338
Pagina: << | 6838 | 6839 | 6840 | 6841 | 6842 | 6843 | 6844 | 6845 | 6846 | 6847 | 6848 | >>

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