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Datasheet-uri găsite :: 1675338
Pagina: << | 6814 | 6815 | 6816 | 6817 | 6818 | 6819 | 6820 | 6821 | 6822 | 6823 | 6824 | >>
Nr.NumeDescriereProducător
272721BC237CBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272722BC237CTANPN Epitaxial Silicon TransistorFairchild Semiconductor
272723BC237TFNPN Epitaxial Silicon TransistorFairchild Semiconductor
272724BC237TFRNPN Epitaxial Silicon TransistorFairchild Semiconductor
272725BC2380.350W General Purpose NPN Transistor plastic cu plumb. 25V Vceo, 0.100A Ic, 120-800 hFEContinental Device India Limited
272726BC238Aplicații de comutare și amplificareFairchild Semiconductor
272727BC238General Purpose TransistorKorea Electronics (KEC)
272728BC238NPN SILICON TRANSITOR EPITAXIAL PLANARMicro Electronics
272729BC238Tranzystor małej częstotliwości małej mocyUltra CEMI
272730BC238Tranzystor krzemowy ma³ej mocy, ma³ej czêstotliwo¶ciUltra CEMI
272731BC238Tranzistor. De comutare și de amplificare a aplicațiilor. Tensiune colector-bază Vcbo = 30V. Tensiune colector-emițător Vceo = 25V. Tensiune emitor-bază VEBO = 6V. Disipare colector PC (max) = 500mW. Colector curent Ic = 100mA.USHA India LTD
272732BC238A0.350W General Purpose NPN Transistor plastic cu plumb. 25V Vceo, 0.100A Ic, 120-220 hFEContinental Device India Limited
272733BC238ANPN Epitaxial Silicon TransistorFairchild Semiconductor
272734BC238ABUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272735BC238ATANPN Epitaxial Silicon TransistorFairchild Semiconductor
272736BC238ATFNPN Epitaxial Silicon TransistorFairchild Semiconductor
272737BC238ATFRNPN Epitaxial Silicon TransistorFairchild Semiconductor
272738BC238B0.350W General Purpose NPN Transistor plastic cu plumb. 25V Vceo, 0.100A Ic, 200-460 hFEContinental Device India Limited
272739BC238BAmplificator TranzistoriMotorola
272740BC238BBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272741BC238BTANPN Epitaxial Silicon TransistorFairchild Semiconductor
272742BC238BUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272743BC238C0.350W General Purpose NPN Transistor plastic cu plumb. 25V Vceo, 0.100A Ic, 380-800 hFEContinental Device India Limited
272744BC238CAmplificator TranzistoriMotorola
272745BC238CAmplificator tranzistor NPNON Semiconductor
272746BC238CBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272747BC238CTANPN Epitaxial Silicon TransistorFairchild Semiconductor
272748BC238TARNPN Epitaxial Silicon TransistorFairchild Semiconductor
272749BC238TFNPN Epitaxial Silicon TransistorFairchild Semiconductor
272750BC238TFRNPN Epitaxial Silicon TransistorFairchild Semiconductor
272751BC2390.350W General Purpose NPN Transistor plastic cu plumb. 25V Vceo, 0.100A Ic, 120-800 hFEContinental Device India Limited
272752BC239Aplicații de comutare și amplificareFairchild Semiconductor
272753BC239General Purpose TransistorKorea Electronics (KEC)
272754BC239NPN SILICON TRANSITOR EPITAXIAL PLANARMicro Electronics
272755BC239Amplificator TranzistoriMotorola
272756BC239Tranzystor małej częstotliwości małej mocyUltra CEMI
272757BC239Tranzistor. De comutare și de amplificare a aplicațiilor. Tensiune colector-bază Vcbo = 30V. Tensiune colector-emițător Vceo = 25V. Tensiune emitor-bază VEBO = 6V. Disipare colector PC (max) = 500mW. Colector curent Ic = 100mA.USHA India LTD
272758BC239ABUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272759BC239ATANPN Epitaxial Silicon TransistorFairchild Semiconductor
272760BC239B0.350W General Purpose NPN Transistor plastic cu plumb. 25V Vceo, 0.100A Ic, 200-460 hFEContinental Device India Limited
Datasheet-uri găsite :: 1675338
Pagina: << | 6814 | 6815 | 6816 | 6817 | 6818 | 6819 | 6820 | 6821 | 6822 | 6823 | 6824 | >>

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