| 1500961 | TC51440JL-80 | 1048576 x 4 BIT DYNAMIC RAM | TOSHIBA |
| 1500962 | TC51440ZL-10 | 1048576 x 4 BIT DYNAMIC RAM | TOSHIBA |
| 1500963 | TC51440ZL-80 | 1048576 x 4 BIT DYNAMIC RAM | TOSHIBA |
| 1500964 | TC514410AJ-60 | 60 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500965 | TC514410AP-10 | 100 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500966 | TC514410AP-60 | 60 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500967 | TC514410AP-70 | 70 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500968 | TC514410AP-80 | 80 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500969 | TC514410ASJ-10 | 100 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500970 | TC514410ASJ-60 | 60 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500971 | TC514410ASJ-70 | 70 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500972 | TC514410ASJ-80 | 80 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500973 | TC514410AZ-10 | 100 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500974 | TC514410AZ-60 | 60 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500975 | TC514410AZ-70 | 70 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500976 | TC514410AZ-80 | 80 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500977 | TC514410J-10 | 100 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500978 | TC514410J-80 | 80 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500979 | TC514410Z-10 | 100 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500980 | TC514410Z-80 | 80 ns, 4-bit generație RAM dinamic | TOSHIBA |
| 1500981 | TC514COI | Capete față precizie analogice | Microchip |
| 1500982 | TC514COI | Analog precizie front-end. | TelCom Semiconductor |
| 1500983 | TC514COI713 | Managementul energiei - Supraveghere sistem / Detectoare de tensiune | Microchip |
| 1500984 | TC514CPJ | Capete față precizie analogice | Microchip |
| 1500985 | TC514CPJ | Analog precizie front-end. | TelCom Semiconductor |
| 1500986 | TC51832 | Silicon Gate CMOS / 32768 word x 8 Bit CMOS Pseudo RAM static | TOSHIBA |
| 1500987 | TC51832F-10 | 100ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500988 | TC51832F-12 | 120ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500989 | TC51832F-85 | 85ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500990 | TC51832FL-10 | 100ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500991 | TC51832FL-12 | 120ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500992 | TC51832FL-85 | 85ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500993 | TC51832P-10 | 100ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500994 | TC51832P-12 | 120ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500995 | TC51832P-85 | 85ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500996 | TC51832PL-10 | 100ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500997 | TC51832PL-12 | 120ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500998 | TC51832PL-85 | 85ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1500999 | TC51832SP-10 | 100ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
| 1501000 | TC51832SP-12 | 120ns; V (in / out / dd): -1 la + 7V; 600MW; 50mA; 32.768 sugerate CMOS x 8-biți RAM pseudo static | TOSHIBA |
